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dc.contributor.authorKu, Ching-Shunen_US
dc.contributor.authorLee, Hsin-Yien_US
dc.contributor.authorHuang, Jheng-Mingen_US
dc.contributor.authorLin, Chih-Mingen_US
dc.date.accessioned2014-12-08T15:07:08Z-
dc.date.available2014-12-08T15:07:08Z-
dc.date.issued2010-04-01en_US
dc.identifier.issn1528-7483en_US
dc.identifier.urihttp://dx.doi.org/10.1021/cg9013043en_US
dc.identifier.urihttp://hdl.handle.net/11536/5597-
dc.description.abstractNonpolar ZnO films were grown epitaxially on (10 (1) over bar0) sapphire substrates at 200 degrees C by atomic layer deposition with interrupted flow. The latter method improved the crystalline quality of ZnO films, transformed the structure from polycrystalline to epitaxial, and enhanced the optical properties of near-band-edge emission. The interfacial structure shows multiple domain phases along sapphire (020) and the disappearance of a minor phase near the surface. As determined by X-ray diffraction, the epitaxial relation between ZnO and sapphire follows [002](ZnO)vertical bar vertical bar[020](sapphire) and [020](ZnO)vertical bar vertical bar[006](sapphire). The photoluminescence intensity increased with increasing crystalline quality and thickness of ZnO films.en_US
dc.language.isoen_USen_US
dc.titleEpitaxial Growth of m-Plane ZnO Thin Films on (10(1)over-bar0) Sapphire Substrate by Atomic Layer Deposition with Interrupted Flowen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/cg9013043en_US
dc.identifier.journalCRYSTAL GROWTH & DESIGNen_US
dc.citation.volume10en_US
dc.citation.issue4en_US
dc.citation.spage1460en_US
dc.citation.epage1463en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000276234500003-
dc.citation.woscount19-
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