標題: Epitaxial Growth of m-Plane ZnO Thin Films on (10(1)over-bar0) Sapphire Substrate by Atomic Layer Deposition with Interrupted Flow
作者: Ku, Ching-Shun
Lee, Hsin-Yi
Huang, Jheng-Ming
Lin, Chih-Ming
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-四月-2010
摘要: Nonpolar ZnO films were grown epitaxially on (10 (1) over bar0) sapphire substrates at 200 degrees C by atomic layer deposition with interrupted flow. The latter method improved the crystalline quality of ZnO films, transformed the structure from polycrystalline to epitaxial, and enhanced the optical properties of near-band-edge emission. The interfacial structure shows multiple domain phases along sapphire (020) and the disappearance of a minor phase near the surface. As determined by X-ray diffraction, the epitaxial relation between ZnO and sapphire follows [002](ZnO)vertical bar vertical bar[020](sapphire) and [020](ZnO)vertical bar vertical bar[006](sapphire). The photoluminescence intensity increased with increasing crystalline quality and thickness of ZnO films.
URI: http://dx.doi.org/10.1021/cg9013043
http://hdl.handle.net/11536/5597
ISSN: 1528-7483
DOI: 10.1021/cg9013043
期刊: CRYSTAL GROWTH & DESIGN
Volume: 10
Issue: 4
起始頁: 1460
結束頁: 1463
顯示於類別:期刊論文


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  1. 000276234500003.pdf