Title: A flexible mixed-signal/RF CMOS technology for implantable electronics applications
Authors: Hsieh, C. Y.
Chen, C. S.
Tsou, W. A.
Yeh, Y. T.
Wen, K. A.
Fan, L-S
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Apr-2010
Abstract: A novel post-CMOS fabrication process has been developed to transform a 0.18 mu m 1P6M mixed-signal/RF CMOS (complementary metal oxide semiconductor)-integrated circuit chips fabricated on an 8 inch SOI (silicon-on-insulator) wafer into flexible devices sandwiched between biocompatible material (10 mu m parylene-C on both sides in this case) and enables future implementation of implantable and fully integrated electronic devices. The functionality of the flexible integrated circuits is demonstrated by a low phase noise RF CMOS VCO (voltage-controlled oscillator) circuit in a ring oscillator configuration that operates at a few hundred MHz to GHz. We report here the associated post-processing technology to make these flexible IC chips and the characterization of both MOS transistors and the demonstration circuit on the flexible IC chip under bending stresses.
URI: http://dx.doi.org/10.1088/0960-1317/20/4/045017
ISSN: 0960-1317
DOI: 10.1088/0960-1317/20/4/045017
Volume: 20
Issue: 4
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