標題: A flexible mixed-signal/RF CMOS technology for implantable electronics applications
作者: Hsieh, C. Y.
Chen, C. S.
Tsou, W. A.
Yeh, Y. T.
Wen, K. A.
Fan, L-S
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-四月-2010
摘要: A novel post-CMOS fabrication process has been developed to transform a 0.18 mu m 1P6M mixed-signal/RF CMOS (complementary metal oxide semiconductor)-integrated circuit chips fabricated on an 8 inch SOI (silicon-on-insulator) wafer into flexible devices sandwiched between biocompatible material (10 mu m parylene-C on both sides in this case) and enables future implementation of implantable and fully integrated electronic devices. The functionality of the flexible integrated circuits is demonstrated by a low phase noise RF CMOS VCO (voltage-controlled oscillator) circuit in a ring oscillator configuration that operates at a few hundred MHz to GHz. We report here the associated post-processing technology to make these flexible IC chips and the characterization of both MOS transistors and the demonstration circuit on the flexible IC chip under bending stresses.
URI: http://dx.doi.org/10.1088/0960-1317/20/4/045017
http://hdl.handle.net/11536/5585
ISSN: 0960-1317
DOI: 10.1088/0960-1317/20/4/045017
期刊: JOURNAL OF MICROMECHANICS AND MICROENGINEERING
Volume: 20
Issue: 4
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結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000275841800018.pdf