Title: A Novel Method of MOSFET Series Resistance Extraction Featuring Constant Mobility Criteria and Mobility Universality
Authors: Lin, Da-Wen
Cheng, Ming-Lung
Wang, Shyh-Wei
Wu, Chung-Cheng
Chen, Ming-Jer
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: MOSFET;series resistance;universal mobility
Issue Date: 1-Apr-2010
Abstract: A method of MOSFET series resistance extraction is established in this paper. The core of this method relies on the constant mobility criteria, while for different gate lengths, it preserves the shape of universal mobility curves in the high-vertical-field regime. Consequently, the series resistance of a MOSFET can be extracted in an analytical and self-consistent manner, achieved without the knowledge of the gate oxide thickness, channel length, channel doping, or channel stress. Reasonable values of extracted series resistance are demonstrated in a wide range of gate length. Technology computer-aided design simulation further corroborates the validity of the proposed method, particularly for devices with heavily doped source/drain extensions. The constant mobility criteria with respect to the bulk charge linearization coefficient are also verified.
URI: http://dx.doi.org/10.1109/TED.2010.2041508
http://hdl.handle.net/11536/5547
ISSN: 0018-9383
DOI: 10.1109/TED.2010.2041508
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 57
Issue: 4
Begin Page: 890
End Page: 897
Appears in Collections:Articles


Files in This Item:

  1. 000275998500019.pdf