Title: Comprehensive Noise Characterization and Modeling for 65-nm MOSFETs for Millimeter-Wave Applications
Authors: Wang, Sheng-Chun
Su, Pin
Chen, Kun-Ming
Liao, Kuo-Hsiang
Chen, Bo-Yuan
Huang, Sheng-Yi
Hung, Cheng-Chou
Huang, Guo-Wei
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Millimeter wave;MOSFET;noise;RF
Issue Date: 1-Apr-2010
Abstract: Using an external tuner-based method, this paper demonstrates a complete millimeter-wave noise characterization and modeling up to 60 GHz for 65-nm MOSFETs for the first time. Due to channel length modulation, the channel noise continues to increase and remains the most important noise source in the millimeter-wave band. Our experimental results further show that, with the downscaling of channel length, the gate resistance has more serious impact on the high-frequency noise parameters than the substrate resistance even in the millimeter-wave frequency.
URI: http://dx.doi.org/10.1109/TMTT.2010.2041582
http://hdl.handle.net/11536/5543
ISSN: 0018-9480
DOI: 10.1109/TMTT.2010.2041582
Journal: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume: 58
Issue: 4
Begin Page: 740
End Page: 746
Appears in Collections:Articles


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