Title: Switching kinetics in epitaxial BiFeO(3) thin films
Authors: Pantel, Daniel
Chu, Ying-Hao
Martin, Lane W.
Ramesh, Ramamoorthy
Hesse, Dietrich
Alexe, Marin
Department of Materials Science and Engineering
Issue Date: 15-Apr-2010
Abstract: The switching kinetics in epitaxial (001)-, (110)-, and (111)-oriented BiFeO(3) thin films were investigated as a function of applied field and time. It was found that the ferroelectric switching behavior obeys the Kolmogorov-Avrami-Ishibashi theory only in the high field range. The detailed behavior depends on the film orientation. A comparison with standard systems, such as epitaxial Pb(Zr(0.2)Ti(0.8))O(3) films, reveals some similarities as well as some differences. For instance, the presence of 109 degrees and 71 degrees ferroelastic domain walls might be ruled out as the source of the decrease in switched polarization at low applied fields, in contrast to what is the case for a/c domain walls in tetragonal Pb(Zr(0.2)Ti(0.8))O(3). (C) 2010 American Institute of Physics. [doi:10.1063/1.3392884]
URI: http://dx.doi.org/10.1063/1.3392884
ISSN: 0021-8979
DOI: 10.1063/1.3392884
Volume: 107
Issue: 8
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