標題: Epitaxial growth of ZnO films at extremely low temperature by atomic layer deposition with interrupted flow
作者: Ku, Ching-Shun
Lee, Hsin-Yi
Huang, Jheng-Ming
Lin, Chih-Ming
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: ZnO;Atomic layer deposition;Flow-rate interruption;X-ray diffraction
公開日期: 15-四月-2010
摘要: Thin crystalline films of zinc oxide (ZnO) of high quality have been grown epitaxially on a (0 0 0 1) c-plane of a sapphire substrate with atomic layer deposition (ALD) at extra-low temperature. With diethylzinc (DEZn) and deionized water as precursors in combination with interrupted flow, we obtained ZnO thin films with an optimal growth window in a range 25-160 degrees C, so effectively lowering the growth temperature by about 120 degrees C relative to the conventional method involving a continuous-flow. We characterized the microstructure of these films with X-ray reflectivity and high-resolution X-ray diffraction (XRD) measurements. The XRD results indicate that the stock time might extend the reaction of DEZn and water through an increased duration. This low temperature for growth results in increased crystalline quality and reduced the non-radiative recombination process to enhance the optical properties of ZnO films. (c) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.matchemphys.2009.12.028
http://hdl.handle.net/11536/5511
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2009.12.028
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 120
Issue: 2-3
起始頁: 236
結束頁: 239
顯示於類別:期刊論文


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