標題: A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices
作者: Li, HH
Chu, YL
Wu, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-1997
摘要: A novel charge-pumping method using de source/drain biases and specified gate waveforms is proposed to extract the lateral distributions of interface-trap and effective oxide-trapped charge densities, The surface potential redistribution due to the oxide-trapped charges is treated by an iteration process in order to accurately determine their lateral distributions, The proposed novel method is feasible for accurately extracting the distributions of interface-trap and effective oxide-trapped charge densities generated by the hot-carrier stress and can be further used to predict the device lifetime.
URI: http://dx.doi.org/10.1109/16.568040
http://hdl.handle.net/11536/550
ISSN: 0018-9383
DOI: 10.1109/16.568040
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 44
Issue: 5
起始頁: 782
結束頁: 791
顯示於類別:期刊論文


文件中的檔案:

  1. A1997WV64800015.pdf