標題: Trigated Poly-Si Nanowire SONOS Devices for Flat-Panel Applications
作者: Lin, Horng-Chih
Liu, Ta-Wei
Hsu, Hsing-Hui
Lin, Chuan-Ding
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Field-effect transistor;multiple gate;nanowire (NW);poly-Si;Si-oxide-nitride-oxide-Si (SONOS)
公開日期: 1-五月-2010
摘要: A new method is proposed and demonstrated to fabricate planar thin-film transistors and trigated nanowire (NW) devices simultaneously on the same panel. By using an oxide-nitride oxide stack as the gate dielectric, the NW devices could also serve as nonvolatile Si-oxide-nitride-oxide-Si (SONOS) memory devices. Our results indicate that the combination of trigate and NW channels help to improve the device performance in terms of steppers subthreshold swing and reduced threshold voltage. Improvement in programming and erasing efficiency of the nonvolatile SONOS memory devices is also demonstrated with the trigated NW structure.
URI: http://dx.doi.org/10.1109/TNANO.2009.2029573
http://hdl.handle.net/11536/5488
ISSN: 1536-125X
DOI: 10.1109/TNANO.2009.2029573
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 9
Issue: 3
起始頁: 386
結束頁: 391
顯示於類別:期刊論文


文件中的檔案:

  1. 000277775700019.pdf