標題: Effects of Al(x)Ga(1-x)N interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition
作者: Lin, Kung-Liang
Chang, Edward-Yi
Hsiao, Yu-Lin
Huang, Wei-Ching
Luong, Tien-Tung
Wong, Yuen-Yee
Li, Tingkai
Tweet, Doug
Chiang, Chen-Hao
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: aluminium compounds;buffer layers;gallium compounds;III-V semiconductors;internal stresses;MOCVD;multilayers;semiconductor epitaxial layers;semiconductor growth;wide band gap semiconductors
公開日期: 1-五月-2010
摘要: GaN film grown on Si substrate using multilayer AlN/Al(x)Ga(1-x)N buffer is studied by the low-pressure metal-organic chemical-vapor deposition method. The Al(x)Ga(1-x)N films with Al composition varying from 1 to 0.66 were used to accommodate the stress induced between GaN and the Si substrate during GaN growth. The correlation of the Al composition in the Al(x)Ga(1-x)N films with respect to the stress induced in the GaN film grown was studied using high-resolution x-ray diffraction, including symmetrical and asymmetrical omega/2 theta scans and reciprocal space maps. It is found that with proper design of the Al composition in the Al(x)Ga(1-x)N buffer layer, crack-free GaN film can be successfully grown on 6 in. Si (111) substrates using multilayer AlN and Al(x)Ga(1-x)N buffer layers. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3385672]
URI: http://dx.doi.org/10.1116/1.3385672
http://hdl.handle.net/11536/5455
ISSN: 1071-1023
DOI: 10.1116/1.3385672
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 28
Issue: 3
起始頁: 473
結束頁: 477
顯示於類別:期刊論文


文件中的檔案:

  1. 000278182700007.pdf