標題: Effect of fluorine flow and deposition temperature on physical characteristics and stability of fluorine-doped siloxane-based low-dielectric-constant material
作者: Cheng, Yi-Lung
Wu, Jiung
Chiu, Tai-Jung
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: dielectric polarisation;fluorine;glass;low-k dielectric thin films;permittivity;porosity;silicon compounds;thermal stability
公開日期: 1-五月-2010
摘要: The effects of SiF(4) flow rate and deposition temperature on the physical properties and stability of fluorine-doped organo-silica-glass (OFSG) films were investigated. The porosity of the as-deposited OFSG dielectrics declines as the flow rate of SiF(4) gas and the deposition temperature increase, increasing the dielectric constant. However, newly formed Si-F bonds have less electronic polarizability, reducing the dielectric constant. These traded-off properties yield a minimum dielectric constant of the OFSG film deposited at 250 degrees C with a SiF(4) flow rate of 100 SCCM (SCCM denotes cubic centimeter per minute at STP). The stability of Si-F bonds in the OFSG films is related to the deposition conditions. OFSG films deposited a higher SiF(4) flow rate (>400 SCCM) or a lower deposition temperature (< 300 degrees C) have lower thermal stability and are less well protected against moisture because of the instability of Si-F bonds. Therefore, more attention should be paid to the conditions for depositing fluorine-doped OFSG dielectrics.
URI: http://dx.doi.org/10.1116/1.3383402
http://hdl.handle.net/11536/5454
ISSN: 0734-2101
DOI: 10.1116/1.3383402
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume: 28
Issue: 3
起始頁: 456
結束頁: 461
顯示於類別:期刊論文


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