標題: Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation
作者: Lu, Yu-Lun
Hsueh, Fu-Kuo
Huang, Kuo-Ching
Cheng, Tz-Yen
Kowalski, Jeff M.
Kowalski, Jeff E.
Lee, Yao-Jen
Chao, Tien-Sheng
Wu, Ching-Yi
電子物理學系
Department of Electrophysics
關鍵字: Low temperature;metal gate;microwave (MW) anneal;rapid thermal annealing (RTA)
公開日期: 1-五月-2010
摘要: In this letter, nanoscale p-MOS TFTs with a TiN gate electrode were realized using a novel microwave (MW) dopant-activation technique. We compared both low-temperature MW annealing and rapid thermal annealing. We successfully activated the source/drain region and suppressed the short-channel effects using low-temperature MW annealing. This technique is promising from the viewpoint of realizing high-performance and low-cost upper layer nanoscale transistors required for low-temperature 3-D integrated circuit fabrication.
URI: http://dx.doi.org/10.1109/LED.2010.2042924
http://hdl.handle.net/11536/5452
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2042924
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 5
起始頁: 437
結束頁: 439
顯示於類別:期刊論文


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  1. 000277047300019.pdf