Title: Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation
Authors: Lu, Yu-Lun
Hsueh, Fu-Kuo
Huang, Kuo-Ching
Cheng, Tz-Yen
Kowalski, Jeff M.
Kowalski, Jeff E.
Lee, Yao-Jen
Chao, Tien-Sheng
Wu, Ching-Yi
電子物理學系
Department of Electrophysics
Keywords: Low temperature;metal gate;microwave (MW) anneal;rapid thermal annealing (RTA)
Issue Date: 1-May-2010
Abstract: In this letter, nanoscale p-MOS TFTs with a TiN gate electrode were realized using a novel microwave (MW) dopant-activation technique. We compared both low-temperature MW annealing and rapid thermal annealing. We successfully activated the source/drain region and suppressed the short-channel effects using low-temperature MW annealing. This technique is promising from the viewpoint of realizing high-performance and low-cost upper layer nanoscale transistors required for low-temperature 3-D integrated circuit fabrication.
URI: http://dx.doi.org/10.1109/LED.2010.2042924
http://hdl.handle.net/11536/5452
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2042924
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 5
Begin Page: 437
End Page: 439
Appears in Collections:Articles


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