標題: An Empirical Defect-Related Photo Leakage Current Model for LTPS TFTs Based on the Unit Lux Current
作者: Tai, Ya-Hsiang
Kuo, Yan-Fu
Sun, Guo-Pei
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: DC stress;leakage current;photosensitivity;poly-Si thin-film transistor (TFT)
公開日期: 1-May-2010
摘要: In this paper, the photosensitive effect of n-type low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) after dc stress is analyzed. It is found that the illumination behaviors for poly-Si TFTs are dependent on the defect types created by different stress conditions of hot-carrier and self-heating effects. For a given stress-induced device degradation, the anomalous illumination behaviors are observed, and these photo-induced leakage currents are not included in the present SPICE device model. Therefore, based on trap-assisted and Poole-Frenkel effect, an empirical defect-related photo leakage current model based on Unit Lux Current (ULC) is proposed to depict the photo-induced current after device degradation. Furthermore, the verified equation of ULC is analytically derived and has good agreement with the experimental data.
URI: http://dx.doi.org/10.1109/TED.2010.2044292
http://hdl.handle.net/11536/5432
ISSN: 0018-9383
DOI: 10.1109/TED.2010.2044292
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 57
Issue: 5
起始頁: 1015
結束頁: 1022
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