Title: Temperature-dependent memory characteristics of silicon-oxide-nitride-oxide-silicon thin-film-transistors
Authors: Chen, Shih-Ching
Chang, Ting-Chang
Wu, Yung-Chun
Chin, Jing-Yi
Syu, Yong-En
Sze, S. M.
Chang, Chun-Yen
Wu, Hsing-Hua
Chen, Yi-Chan
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
Keywords: Polycrystalline silicon;SONOS;Nonvolatile memory;Thin-film transistor (TFT)
Issue Date: 3-May-2010
Abstract: This study investigates the temperature-dependent memory characteristics of polycrystalline silicon thin-film transistors with oxide/nitride/oxide stack gate dielectrics and N(+) poly-Si gate structures for nonvolatile memory application. As the device was programmed by Fowler-Nordheim tunneling at high temperature, some electrons captured in shallow traps could obtain enough thermal energy to de-trap to the gate, resulting in low programming efficiency. As the programming time increases, the hole injection through the blocking oxide from the gate would further lead the threshold voltage to decrease. In addition, the retention characteristic of the device programmed at higher temperature exhibits better charge storage ability. Because the electrons trapped in the shallow traps of the nitride layer can be easily de-trapped when temperature rises, the memory characteristics are mainly dominated by charges stored in the deep traps. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2009.12.006
http://hdl.handle.net/11536/5418
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2009.12.006
Journal: THIN SOLID FILMS
Volume: 518
Issue: 14
Begin Page: 3999
End Page: 4002
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