Title: Recent progress on GaN-based vertical cavity surface emitting lasers - art. no. 67660G
Authors: Lu, T. C.
Kao, C. C.
Huang, G. S.
Kuo, H. C.
Wang, S. C.
光電工程學系
Department of Photonics
Keywords: GAN;VCSELS;DBRs
Issue Date: 2007
Abstract: We report the recent progress of GaN-based VCSELs with two different laser structures. One is a hybrid cavity structure comprised an epitaxial AlN/GaN DBR, an InGaN/GaN MQW active region and a top dielectric DBR. Another is a dielectric cavity structure comprised an InGaN/GaN MQW layer sandwiched by two dielectric DBRs. Both lasers achieved laser action under optical pumping at the room temperature with narrow linewidth. The detailed characteristics of VCSELs will be reported. The status of the electrically pumped VCSEL will also be presented.
URI: http://hdl.handle.net/11536/5390
http://dx.doi.org/10.1117/12.729281
ISBN: 978-0-8194-6926-7
ISSN: 0277-786X
DOI: 10.1117/12.729281
Journal: OPTOELECTRONIC DEVICES: PHYSICS, FABRICATION, AND APPLICATION IV
Volume: 6766
Begin Page: G7660
End Page: G7660
Appears in Collections:Conferences Paper


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