標題: Recent progress on GaN-based vertical cavity surface emitting lasers - art. no. 67660G
作者: Lu, T. C.
Kao, C. C.
Huang, G. S.
Kuo, H. C.
Wang, S. C.
光電工程學系
Department of Photonics
關鍵字: GAN;VCSELS;DBRs
公開日期: 2007
摘要: We report the recent progress of GaN-based VCSELs with two different laser structures. One is a hybrid cavity structure comprised an epitaxial AlN/GaN DBR, an InGaN/GaN MQW active region and a top dielectric DBR. Another is a dielectric cavity structure comprised an InGaN/GaN MQW layer sandwiched by two dielectric DBRs. Both lasers achieved laser action under optical pumping at the room temperature with narrow linewidth. The detailed characteristics of VCSELs will be reported. The status of the electrically pumped VCSEL will also be presented.
URI: http://hdl.handle.net/11536/5390
http://dx.doi.org/10.1117/12.729281
ISBN: 978-0-8194-6926-7
ISSN: 0277-786X
DOI: 10.1117/12.729281
期刊: OPTOELECTRONIC DEVICES: PHYSICS, FABRICATION, AND APPLICATION IV
Volume: 6766
起始頁: G7660
結束頁: G7660
顯示於類別:會議論文