標題: Crystalline structure changes in GaN films grown at different temperatures
作者: Lin, HC
Ou, J
Chen, WK
Chen, WH
Lee, MC
交大名義發表
電子物理學系
National Chiao Tung University
Department of Electrophysics
關鍵字: GaN;crystalline structure;Raman scattering;photoluminescence
公開日期: 15-五月-1997
摘要: Thin GaN films were grown on (0001) sapphire at various temperatures between 520 and 1050 degrees C using metalorganic chemical vapor deposition (MOCVD). Optical properties and crystalline structures of the films were investigated by means of photoluminescence, Raman scattering, and X-ray diffraction. A noticeable structure transition occurred at around 750 degrees C with higher growth temperatures favoring the hexagonal structure and lower ones the cubic. Defect formation was also seen to be temperature dependent. The yellow luminescence which was clearly observed in our 700-850 degrees C films was attributable to the cubic and hexagonal structure mixing. The drastic reduction of yellow luminescence and the substantial enhancement of near band edge emission in the 950-1050 degrees C films indicated that this temperature range is optimum for growing high quality wurtzite films.
URI: http://dx.doi.org/10.1143/JJAP.36.L598
http://hdl.handle.net/11536/539
ISSN: 
DOI: 10.1143/JJAP.36.L598
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 36
Issue: 5B
起始頁: L598
結束頁: L600
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XC49000003.pdf