標題: The influences of device geometry and p-type doping on a solution-processed polymer space-charge-limited transistor
作者: Chao, Yu-Chiang
Chen, Chun-Yu
Zan, Hsiao-Wen
Meng, Hsin-Fei
物理研究所
光電工程學系
Institute of Physics
Department of Photonics
公開日期: 26-May-2010
摘要: A polymer vertical transistor with an on/off current ratio higher than 10(4) is demonstrated. The proposed space-charge limited transistor (SCLT) uses a metal-grid base containing high-density submicrometre openings to modulate the vertical space-charge-limited current (SCLC). The key to obtaining a high on/off current ratio is to reduce the leakage current of SCLT. In this paper, an improved device structure that isolates the grid metal by using both top and bottom insulating layers is demonstrated. Then, with an identical proposed structure, the geometric design is also found to significantly influence the on/off ratio over 3 orders of magnitude. The competition between the SCLC and the grid to collector leakage current is analysed. Finally, the influence of tetrafluoro-tetracyano-quinodimethane doping on the transistor characteristics is investigated. The results are important for the design of polymer vertical transistors with high on/off ratios.
URI: http://dx.doi.org/10.1088/0022-3727/43/20/205101
http://hdl.handle.net/11536/5387
ISSN: 0022-3727
DOI: 10.1088/0022-3727/43/20/205101
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 43
Issue: 20
結束頁: 
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