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dc.contributor.authorChen, Cheng-Pinen_US
dc.contributor.authorLin, Pei-Hsuanen_US
dc.contributor.authorHung, Yen-Jenen_US
dc.contributor.authorHsu, Shao-Shunen_US
dc.contributor.authorChen, Liang-Yien_US
dc.contributor.authorCheng, Yun-Weien_US
dc.contributor.authorKe, Min-Yungen_US
dc.contributor.authorHuang, Ying-Yuanen_US
dc.contributor.authorChang, Chun-Hsiangen_US
dc.contributor.authorChiu, Ching-Huaen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorHuang, JianJangen_US
dc.date.accessioned2014-12-08T15:06:53Z-
dc.date.available2014-12-08T15:06:53Z-
dc.date.issued2010-05-28en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/21/21/215201en_US
dc.identifier.urihttp://hdl.handle.net/11536/5386-
dc.description.abstractIn this work, n-GZO/a:amorphous-Si(i:intrinsic)/p(+)-Si photodiodes are fabricated. We employed a nanosphere lithographic technique to obtain nanoscale patterns on either the a-Si(i) or p(+)-Si surface. As compared with the planar n-GZO/p(+)-Si diode, the devices with nanopatterned a-Si(i) and nanopatterned p(+)-Si substrates show a 32% and 36.2% enhancement of photoresponsivity. Furthermore, the acceptance angle measurement reveals that the nanostructured photodiodes have larger acceptance angles than the planar structure. It also shows that the device with the nanocone structure has a higher acceptance angle than that with the nanorod structure.en_US
dc.language.isoen_USen_US
dc.titleInvestigation of light absorption properties and acceptance angles of nanopatterned GZO/a-Si/p(+)-Si photodiodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/21/21/215201en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume21en_US
dc.citation.issue21en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000277215200005-
dc.citation.woscount5-
Appears in Collections:Articles


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