標題: Investigation of light absorption properties and acceptance angles of nanopatterned GZO/a-Si/p(+)-Si photodiodes
作者: Chen, Cheng-Pin
Lin, Pei-Hsuan
Hung, Yen-Jen
Hsu, Shao-Shun
Chen, Liang-Yi
Cheng, Yun-Wei
Ke, Min-Yung
Huang, Ying-Yuan
Chang, Chun-Hsiang
Chiu, Ching-Hua
Kuo, Hao-Chung
Huang, JianJang
光電工程學系
Department of Photonics
公開日期: 28-May-2010
摘要: In this work, n-GZO/a:amorphous-Si(i:intrinsic)/p(+)-Si photodiodes are fabricated. We employed a nanosphere lithographic technique to obtain nanoscale patterns on either the a-Si(i) or p(+)-Si surface. As compared with the planar n-GZO/p(+)-Si diode, the devices with nanopatterned a-Si(i) and nanopatterned p(+)-Si substrates show a 32% and 36.2% enhancement of photoresponsivity. Furthermore, the acceptance angle measurement reveals that the nanostructured photodiodes have larger acceptance angles than the planar structure. It also shows that the device with the nanocone structure has a higher acceptance angle than that with the nanorod structure.
URI: http://dx.doi.org/10.1088/0957-4484/21/21/215201
http://hdl.handle.net/11536/5386
ISSN: 0957-4484
DOI: 10.1088/0957-4484/21/21/215201
期刊: NANOTECHNOLOGY
Volume: 21
Issue: 21
結束頁: 
Appears in Collections:Articles


Files in This Item:

  1. 000277215200005.pdf