標題: Vertically Coupled Quantum-Dot Infrared Photodetectors
作者: Lo, Ming-Cheng
Wang, Shiang-Yu
Ling, Hong-Shi
Lee, Chien-Ping
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Infrared detectors;photodetectors;quantum dots (QDs);quantum effect semiconductor devices
公開日期: 1-六月-2010
摘要: Vertically coupled InAs-GaAs quantum-dot infrared photodetectors (QDIPs) were studied in this letter. With vertically coupled quantum dots (QDs), the QDs in the same column share the same electronic states which remove the QD size variation effect in the growth direction and result in a narrow response band and higher peak quantum efficiency. The coupled states increase the capture probability and also facilitate the carrier flow among QD layers. The frequency response of vertically coupled QDIPs is much faster than that of the conventional ones.
URI: http://dx.doi.org/10.1109/LPT.2010.2046030
http://hdl.handle.net/11536/5381
ISSN: 1041-1135
DOI: 10.1109/LPT.2010.2046030
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 22
Issue: 11
起始頁: 796
結束頁: 798
顯示於類別:期刊論文


文件中的檔案:

  1. 000277664900002.pdf