Title: Vertically Coupled Quantum-Dot Infrared Photodetectors
Authors: Lo, Ming-Cheng
Wang, Shiang-Yu
Ling, Hong-Shi
Lee, Chien-Ping
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Infrared detectors;photodetectors;quantum dots (QDs);quantum effect semiconductor devices
Issue Date: 1-Jun-2010
Abstract: Vertically coupled InAs-GaAs quantum-dot infrared photodetectors (QDIPs) were studied in this letter. With vertically coupled quantum dots (QDs), the QDs in the same column share the same electronic states which remove the QD size variation effect in the growth direction and result in a narrow response band and higher peak quantum efficiency. The coupled states increase the capture probability and also facilitate the carrier flow among QD layers. The frequency response of vertically coupled QDIPs is much faster than that of the conventional ones.
URI: http://dx.doi.org/10.1109/LPT.2010.2046030
http://hdl.handle.net/11536/5381
ISSN: 1041-1135
DOI: 10.1109/LPT.2010.2046030
Journal: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 22
Issue: 11
Begin Page: 796
End Page: 798
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