標題: Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain
作者: Dai, Chih-Hao
Chang, Ting-Chang
Chu, Ann-Kuo
Kuo, Yuan-Jui
Chen, Shih-Ching
Tsai, Chih-Tsung
Lo, Wen-Hung
Ho, Szu-Han
Xia, Guangrui
Cheng, Osbert
Huang, Cheng Tung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: SOI;GIFBE;Electron-valance band tunneling;Strained silicon
公開日期: 25-十一月-2010
摘要: The influence of tensile mechanical strain on gate-induced floating-body effect (GIFBE) in advanced partially depleted SOI n-MOSFETs was investigated. Both drain current and mobility enhance after applying strain due to the reduction of average transfer effective mass. However, it was found that the GIFBE becomes serious under the mechanical strain. To explain this phenomenon, we first clarify the mechanism of GIFBE using different operation conditions. The experiment results indicate that the GIFBE can be attributed to the anode hole injection (AHI) rather than the widely accepted mechanism of electron band (EVB) tunneling. Based on the AHI model, the enhanced GIFBE under the mechanical strain is mainly due to the narrowing of band gap induced by the strain in the poly-gate. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2010.07.028
http://hdl.handle.net/11536/5345
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2010.07.028
期刊: SURFACE & COATINGS TECHNOLOGY
Volume: 205
Issue: 5
起始頁: 1470
結束頁: 1474
顯示於類別:會議論文


文件中的檔案:

  1. 000285487700052.pdf