Title: Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth
Authors: Huang, H. W.
Huang, J. K.
Lee, K. Y.
Lin, C. F.
Kuo, H. C.
Department of Photonics
Issue Date: 1-Jun-2010
Abstract: GaN-based LEDs with a SiO(2) oxide PQC pattern on an n-GaN layer by nanoimprint lithography are fabricated and investigated. At a driving current of 20 mA on a Transistor-Outline-can package, the light output power of LED III (d = 1.2 mu m) was enhanced by a factor of 1.20. The internal-quantum-efficiency result offers promising potential to enhance the light output power of commercial light-emitting devices with a SiO(2) oxide PQC structure on an n-GaN layer.
URI: http://dx.doi.org/10.1109/LED.2010.2045218
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2045218
Volume: 31
Issue: 6
Begin Page: 573
End Page: 575
Appears in Collections:Articles