|Title:||Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth|
|Authors:||Huang, H. W.|
Huang, J. K.
Lee, K. Y.
Lin, C. F.
Kuo, H. C.
Department of Photonics
|Abstract:||GaN-based LEDs with a SiO(2) oxide PQC pattern on an n-GaN layer by nanoimprint lithography are fabricated and investigated. At a driving current of 20 mA on a Transistor-Outline-can package, the light output power of LED III (d = 1.2 mu m) was enhanced by a factor of 1.20. The internal-quantum-efficiency result offers promising potential to enhance the light output power of commercial light-emitting devices with a SiO(2) oxide PQC structure on an n-GaN layer.|
|Journal:||IEEE ELECTRON DEVICE LETTERS|
|Appears in Collections:||Articles|