標題: On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs
作者: Dai, Chih-Hao
Chang, Ting-Chang
Chu, Ann-Kuo
Kuo, Yuan-Jui
Chen, Shih-Ching
Tsai, Chih-Chung
Ho, Szu-Han
Lo, Wen-Hung
Xia, Guangrui
Cheng, Osbert
Huang, Cheng Tung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electron-valence band (EVB) tunneling;gate-induced floating-body effect (GIFBE);linear kink effect;silicon-on-insulator (SOI)
公開日期: 1-Jun-2010
摘要: This letter systematically investigates the mechanism of gate-induced floating-body effect (GIFBE) in advanced partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Based on different operation conditions, we found that the hole current collected by the body terminal is strongly dependent on electrons in the inversion layer under a source/drain ground. This implies that GIFBE can be attributed to anode hole injection (AHI) rather than the widely accepted mechanism of electron valence band tunneling. Moreover, GIFBE was also analyzed as a function of temperature. The results provide further evidence that the accumulation of holes in the body results from the AHI-induced direct tunneling current from the gate.
URI: http://dx.doi.org/10.1109/LED.2010.2046131
http://hdl.handle.net/11536/5332
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2046131
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 6
起始頁: 540
結束頁: 542
Appears in Collections:Articles


Files in This Item:

  1. 000282101200006.pdf