標題: Effect of annealing treatment and nanomechanical properties for multilayer Si(0.8)Ge(0.2)-Si films
作者: He, Bo-Ching
Wen, Hua-Chiang
Lin, Meng-Hung
Lai, Yi-Shao
Wu, Wen-Fa
Chou, Chang-Pin
機械工程學系
Department of Mechanical Engineering
公開日期: 1-Jun-2010
摘要: Multilayered silicon-germanium (SiGe) films consisting of alternating sublayers with different mechanical properties have been epitaxially deposited by an ultra-high vacuum chemical vapor deposition (UHV/CVD) system. We report engineering of the mechanical properties of SiGe multilayer films by a commercial nanoindenter. From annealing treatment, it consists of an ex situ thermal treatments in furnace (600 degrees C) and rapid thermal annealing (800 degrees C) system. Subsequent roughness and microstructure of SiGe multilayer films were characterized by means of atomic force microscope (AFM) and transmission electron microscopy (TEM). The annealing treatment not only produced misfit dislocations as a significant role in the critical pile-up event but also promoted hardness. The hardness of the films increased slightly and then gradually achieved a maximum value (from 12.6 +/- 0 4 GPa to 14.2 +/- 0.7 GPa) with increasing annealing temperature. This may be due to the relaxation effect from thermal annealing and is potential to provide the reliability behaviours to design periodical SiGe multilayer structure in further. (C) 2010 Published by Elsevier Ltd
URI: http://dx.doi.org/10.1016/j.microrel.2010.02.013
http://hdl.handle.net/11536/5310
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2010.02.013
期刊: MICROELECTRONICS RELIABILITY
Volume: 50
Issue: 6
起始頁: 851
結束頁: 856
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