Title: Higher-kappa titanium dioxide incorporating LaAlO(3) as dielectrics for MIM capacitors
Authors: Cheng, C. H.
Hsu, H. H.
Chen, P. C.
Liou, B. H.
Chin, Albert
Yeh, F. S.
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Jun-2010
Abstract: In this work, we studied a TiO(2) mixed LaAlO(3) dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/mu m(2) and a low leakage current of 7.5 x 10(-7) A/cm(2) at -1 V. Comparing to the control samples of TiLaO (ILO), TLAO dielectrics with Al(2)O(3) doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO(2)-based dielectrics with the introduction of Al(2)O(3) might be favorable for the improved engineering of MIM capacitors. (C) 2010 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2010.01.024
ISSN: 0038-1101
DOI: 10.1016/j.sse.2010.01.024
Volume: 54
Issue: 6
Begin Page: 646
End Page: 649
Appears in Collections:Articles