標題: Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
作者: Ling, Shih-Chun
Lu, Tien-Chang
Chang, Shih-Pang
Chen, Jun-Rong
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
公開日期: 7-Jun-2010
摘要: We investigated the electroluminescence and relatively external quantum efficiency (EQE) of m-plane InGaN/GaN light emitting diodes (LEDs) emitting at 480 nm to elucidate the droop behaviors in nitride-based LEDs. With increasing the injection current density to 100 A/cm(2), the m-plane LEDs exhibit only 13% efficiency droop, whereas conventional c-plane LEDs suffer from efficiency droop at very low injection current density and the EQE of c-plane LEDs decrease to as little as 50% of its maximum value. Our simulation models show that in m-plane LEDs the absence of polarization fields manifest not only the hole distribution more uniform among the wells but also the reduction in electron overflow out of electron blocking layer. These results suggest that the nonuniform distribution of holes and electron leakage current due to strong polarization fields are responsible for the relatively significant efficiency droop of conventional c-plane LEDs. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3449557]
URI: http://dx.doi.org/10.1063/1.3449557
http://hdl.handle.net/11536/5275
ISSN: 0003-6951
DOI: 10.1063/1.3449557
期刊: APPLIED PHYSICS LETTERS
Volume: 96
Issue: 23
結束頁: 
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