標題: Effects of isolation oxides on undercut formation and electrical characteristics for silicon selective epitaxial growth
作者: Tseng, HC
Chang, CY
Pan, FM
Chen, LP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-六月-1997
摘要: Three isolation oxide structures have been prepared to study their resistance to the undercut formation during selective epitaxial growth (SEG) processes. The N2O annealed oxide tetraethyoxysilane (TEOS) oxide stacked structure has the best resistance to the undercut formation and exhibits the best electrical characteristics compared to the other two isolation oxide structures prepared in the study, which are a wet oxide and a TEOS oxide. This is ascribed to a smaller interfacial stress between the isolation oxide and the silicon substrate for the stacked structure. The sidewall damage is the predominant factor deteriorating the current-voltage (I-V) characteristics of the N+-P SEG diodes. When treated with a quick HF dip and followed by a low temperature desorption cleaning before the SEG process, the N+-P SEG diode, which has no perceivable undercut, shows satisfactory I-V characteristics.
URI: http://hdl.handle.net/11536/527
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 144
Issue: 6
起始頁: 2226
結束頁: 2230
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XH82800072.pdf