標題: Study of InGaN-GaN Light-Emitting Diodes With Different Last Barrier Thicknesses
作者: Chen, Jun-Rong
Lu, Tien-Chang
Kuo, Hao-Chung
Fang, K. L.
Huang, K. F.
Kuo, C. W.
Chang, C. J.
Kuo, C. T.
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: Electroluminescence;electron overflow;light-emitting diodes (LEDs);quantum wells (QWs)
公開日期: 15-Jun-2010
摘要: This work reports a theoretical and experimental study on the device performance of blue InGaN-GaN light-emitting diodes (LEDs) with different last barrier thicknesses. The experimental results show that the employment of a 25-nm-thick p-type GaN last barrier in GaN LEDs can improve the light output power from 35.6 to 40.2 mW at 50 mA. By using advanced device simulation, it is shown that the effective energy barrier created by the p-type AlGaN electron blocking layer (EBL) is significantly decreased due to the band bending at the interface between GaN last barrier and AlGaN EBL. The use of a p-type GaN last barrier before the growth of AlGaN EBL can provide a higher energy barrier to suppress the electron overflow and then enhance the light output power.
URI: http://dx.doi.org/10.1109/LPT.2010.2046483
http://hdl.handle.net/11536/5261
ISSN: 1041-1135
DOI: 10.1109/LPT.2010.2046483
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 22
Issue: 12
起始頁: 860
結束頁: 862
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