標題: Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/InxGa1-xAs (x=-> 0) AlyGa1-yAs (y=0 -> 0.3) contact structures
作者: Chen, SS
Lin, CC
Lan, WH
Tu, SL
Peng, CK
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: nonalloyed;pseudomorphic high electron mobility transistors;molecular beam epitaxy;ohmic contact;specific contact resistance;small-signal equivalent circuit model
公開日期: 1-六月-1997
摘要: A molecular beam epitaxy InAs/InxGa1-xAs (x = 1 --> 0)/AlyGa1-yAs (y = 0 --> 0.3) heterojunction was used as an ohmic contact structure to the GaAs-based pseudomorphic high electron mobility transistors (PHEMTs). This nonalloyed PHEMT had a specific contact resistance r(c) of 1.05 x 10(-7) Omega . cm(2) and an extrinsic transconductance g(me) of 272 mS/mm for devices with 1 mu m gate-length, microwave measurements shelved a current gain cut-off frequency f(t) of 22 GHz and a maximum oscillation frequency f(max) of 43 GHz. These results are comparable to our best conventional PHEMTs' alloyed at 450 degrees C and 2 min duration. Meanwhile, a small-signal equivalent circuit model of the nonalloyed PHEMT has also been demonstrated.
URI: http://dx.doi.org/10.1143/JJAP.36.3443
http://hdl.handle.net/11536/525
ISSN: 0021-4922
DOI: 10.1143/JJAP.36.3443
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 36
Issue: 6A
起始頁: 3443
結束頁: 3447
顯示於類別:期刊論文


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