Title: Transition of stable rectification to resistive-switching in Ti/TiO(2)/Pt oxide diode
Authors: Huang, Jiun-Jia
Kuo, Chih-Wei
Chang, Wei-Chen
Hou, Tuo-Hung
Department of Electrical and Computer Engineering
Issue Date: 28-Jun-2010
Abstract: We have fabricated a Ti/TiO(2)/Pt oxide diode with excellent rectifying characteristics by the asymmetric Schottky barriers at the Ti/TiO(2) (0.13 eV) and the TiO(2)/Pt (0.73 eV) interfaces. Instead of homogeneous conduction, the current transport is governed by the localized oxygen-deficient TiO(2) filaments. In addition, the reproducible resistive-switching exists in the same structure, triggered by the forming process. The transition between two modes is ascribed to the destruction of the interface barriers at forming. The rectification stable up to 125 degrees C and 10(3) cycles under +/- 3 V sweep without interference with resistive-switching shows satisfactory reliability of TiO(2) diodes for one diode-one resistor memory devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457866]
URI: http://dx.doi.org/10.1063/1.3457866
ISSN: 0003-6951
DOI: 10.1063/1.3457866
Volume: 96
Issue: 26
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