Title: High extraction efficiency GaN-based light-emitting diodes on embedded SiO(2) nanorod array and nanoscale patterned sapphire substrate
Authors: Huang, Hung-Wen
Huang, Jhi-Kai
Kuo, Shou-Yi
Lee, Kang-Yuan
Kuo, Hao-Chung
Department of Photonics
Issue Date: 28-Jun-2010
Abstract: In this paper, GaN-based LEDs with a nanoscale patterned sapphire substrate (NPSS) and a SiO(2) photonic quasicrystal (PQC) structure on an n-GaN layer using nanoimprint lithography are fabricated and investigated. The light output power of LED with a NPSS and a SiO(2) PQC structure on an n-GaN layer was 48% greater than that of conventional LED. Strong enhancement in output power is attributed to better epitaxial quality and higher reflectance resulted from NPSS and PQC structures. Transmission electron microscopy images reveal that threading dislocations are blocked or bended in the vicinities of NPSS layer. These results provide promising potential to increase output power for commercial light emitting devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456385]
URI: http://dx.doi.org/10.1063/1.3456385
ISSN: 0003-6951
DOI: 10.1063/1.3456385
Volume: 96
Issue: 26
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Appears in Collections:Articles