標題: Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress
作者: Chen, Yu-Chun
Chang, Ting-Chang
Li, Hung-Wei
Chen, Shih-Ching
Lu, Jin
Chung, Wan-Fang
Tai, Ya-Hsiang
Tseng, Tseung-Yuen
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: adsorption;semiconductor thin films;thin film transistors;tin compounds;zinc compounds
公開日期: 28-Jun-2010
摘要: This study investigates the effects of bias-induced oxygen adsorption on the electrical characteristic instability of zinc tin oxide thin film transistors in different ambient oxygen partial pressures. When oxygen pressure is largest, the threshold voltages showed the quickest increase but the slowest recovery during the stress phase and recovery phase, respectively. This finding corresponds to the charge trapping time constant and recovery time constant, which are extracted by fitting the stretched-exponential equation and which exhibit a relationship with oxygen pressure. We suggest that the gate bias reduces the activation energy of oxygen adsorption during gate bias stress. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457996]
URI: http://dx.doi.org/10.1063/1.3457996
http://hdl.handle.net/11536/5243
ISSN: 0003-6951
DOI: 10.1063/1.3457996
期刊: APPLIED PHYSICS LETTERS
Volume: 96
Issue: 26
結束頁: 
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