標題: Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
作者: Chen, Min-Chen
Chang, Ting-Chang
Tsai, Chih-Tsung
Huang, Sheng-Yao
Chen, Shih-Ching
Hu, Chih-Wei
Sze, Simon M.
Tsai, Ming-Jinn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: electric resistance;electrochemical electrodes;gallium compounds;indium compounds;MIS structures;platinum;point contacts;random-access storage;semiconductor storage;semiconductor thin films;titanium;titanium compounds;zinc compounds
公開日期: 28-六月-2010
摘要: The InGaZnO taken as switching layer in resistive nonvolatile memory is proposed in this paper. The memory cells composed of Ti/InGaZnO/TiN reveal the bipolar switching behavior that keeps stable resistance ratio of 10(2) with switching responses over 100 cycles. The resistance switching is ascribed to the formation/disruption of conducting filaments upon electrochemical reaction near/at the bias-applied electrode. The influence of electrode material on resistance switching is investigated through Pt/InGaZnO/TiN devices, which perform the unipolar and bipolar behavior as applying bias on Pt and TiN electrode, respectively. Experimental results demonstrate that the switching behavior is selective by the electrode. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456379]
URI: http://dx.doi.org/10.1063/1.3456379
http://hdl.handle.net/11536/5242
ISSN: 0003-6951
DOI: 10.1063/1.3456379
期刊: APPLIED PHYSICS LETTERS
Volume: 96
Issue: 26
結束頁: 
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