標題: Effect of oxygen concentration on characteristics of NiOx-based resistance random access memory
作者: Lee, Ming-Daou
Ho, Chia-Hua
Lo, Chi-Kuen
Peng, Tai-Yen
Yao, Yeong-Der
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: NiO;resistance random access memory (RRAM);Schottky emission
公開日期: 1-Feb-2007
摘要: The resistance bistability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory.
URI: http://dx.doi.org/10.1109/TMAG.2006.888525
http://hdl.handle.net/11536/5235
ISSN: 0018-9464
DOI: 10.1109/TMAG.2006.888525
期刊: IEEE TRANSACTIONS ON MAGNETICS
Volume: 43
Issue: 2
起始頁: 939
結束頁: 942
Appears in Collections:Conferences Paper


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