Title: Measuring junction temperature of GaAs solar cells using pulse-width modulation photoluminescence
Authors: Yang, M. D.
Liao, W. C.
Shu, G. W.
Liu, Y. K.
Shen, J. L.
Wu, C. H.
Chou, W. C.
Lee, Y. C.
電子物理學系
Department of Electrophysics
Keywords: Semiconductors;Thermodynamic properties;Luminescence
Issue Date: 1-Jul-2010
Abstract: A photoluminescence (PL) technique is presented to measure the junction temperature of GaAs solar cells. The technique utilizes the pulse-width modulation of excitation laser and the temperature dependence of PL spectra. The apparent change of PL energy on duty cycle can be advantageously used for the determination of the junction temperature. Varying the duty cycle from 10% to 75% causes an increase of 2.9 Kin the junction temperature of GaAs solar cells. The carrier temperature of the junction layer was studied to confirm the result obtained from the pulse-width modulation PL (C) 2010 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.ssc.2010.04.004
http://hdl.handle.net/11536/5227
ISSN: 0038-1098
DOI: 10.1016/j.ssc.2010.04.004
Journal: SOLID STATE COMMUNICATIONS
Volume: 150
Issue: 27-28
Begin Page: 1217
End Page: 1220
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