標題: Crossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum well
作者: Lo, Shun-Tsung
Chen, Kuang Yao
Su, Yi-Chun
Liang, C. -T.
Chang, Y. H.
Kim, Gil-Ho
Wu, J. -Y.
Lin, Sheng-Di
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Quantum wells;Semiconductors;Quantum localization
公開日期: 1-七月-2010
摘要: We have performed magnetoresistance measurements on a Si delta-doped GaAs single quantum well With increasing temperature T, a crossover from negative magnetoresistance (NMR) to positive magnetoresistance (PMR) can be observed Our experimental results suggest that such a crossover corresponds to a transition from variable range hopping regime to activated electron transport. This is also consistent with the measured non-monotonic carrier density dependence on T. (C) 2010 Elsevier Ltd All rights reserved.
URI: http://dx.doi.org/10.1016/j.ssc.2010.03.030
http://hdl.handle.net/11536/5226
ISSN: 0038-1098
DOI: 10.1016/j.ssc.2010.03.030
期刊: SOLID STATE COMMUNICATIONS
Volume: 150
Issue: 25-26
起始頁: 1104
結束頁: 1107
顯示於類別:期刊論文


文件中的檔案:

  1. 000278630200002.pdf