標題: Broadband Quantum-Dot Infrared Photodetector
作者: Lin, Wei-Hsun
Tseng, Chi-Che
Chao, Kuang-Ping
Kung, Shu-Yen
Lin, Shih-Yen
Wu, Meng-Chyi
光電工程學系
Department of Photonics
關鍵字: Quantum-dot infrared photodetectors (QDIPs)
公開日期: 1-Jul-2010
摘要: In this letter, we report the five-period quantum-dot infrared photodetectors (QDIPs) with a bi-stacked quantum-dot (QD) structure for a wide and relatively flat detection response ranging from 4 to 11 m with high responsivities. The bi-stacked QD structure consists of a standard InAs QD and an InGaAs-capped InAs QD layer separated by a 50-nm GaAs barrier layer. The device exhibits a wide detection window in the range of 4-11 mu m with high responsivities, which suggests that similar responsivities can be obtained for the standard QD and the InGaAs-capped QD layers in the mid-wavelength (MWIR) and long-wavelength (LWIR) infrared ranges, respectively. The results are advantageous for the development of broadband QDIPs covering MWIR and LWIR ranges based on the stacked QD structures.
URI: http://dx.doi.org/10.1109/LPT.2010.2048425
http://hdl.handle.net/11536/5215
ISSN: 1041-1135
DOI: 10.1109/LPT.2010.2048425
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 22
Issue: 13
起始頁: 963
結束頁: 965
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