標題: A Robust Data Retention Characteristic of Sol-Gel-Derived Nanocrystal Memory by Hot-Hole Trapping
作者: Wu, Chi-Chang
Ko, Fu-Hsiang
Yang, Wen-Luh
You, Hsin-Chiang
Liu, Fu-Ken
Yeh, Chen-Chih
Liu, Pin-Lin
Tung, Chiou-Kou
Cheng, Ching-Hwa
材料科學與工程學系
材料科學與工程學系奈米科技碩博班
Department of Materials Science and Engineering
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
關鍵字: Flash memory;hole trapping;nanocrystal (NC);sol-gel
公開日期: 1-Jul-2010
摘要: A new sol-gel-derived Ti(x)Zr(y)Si(z)O nanocrystal (NC) memory with a high-performance data retention characteristic is demonstrated by the hot-hole-trapping method. Prior to rapid thermal annealing, the high-density NC layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride. The electrical properties of the sol-gel-derived NC memory are demonstrated in terms of memory window, charge retention, program speed, and endurance. The memory window of the NC memory from the novel hot-hole-trapping mechanism can be achieved up to 4.18 +/- 0.21 V, and long retention times obtained from extrapolation up to 10(6) s are observed as 8%, 13%, and 21% window narrowing under respective temperatures of 25 degrees C, 85 degrees C, and 125 degrees C. The good electrical performance is attributed to the contribution of the high density of isolated NCs and hole-trapped into the deep-trap energy level, so no significant lateral and vertical charge leakage occurs.
URI: http://dx.doi.org/10.1109/LED.2010.2048193
http://hdl.handle.net/11536/5202
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2048193
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 7
起始頁: 746
結束頁: 748
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