標題: Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small Subthreshold Swing
作者: Su, Nai-Chao
Wang, Shui-Jinn
Huang, Chin-Chuan
Chen, Yu-Han
Huang, Hao-Yuan
Chiang, Chen-Kuo
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Flexible thin-film transistors (TFTs);HfLaO;high-kappa;InGaZnO (IGZO)
公開日期: 1-七月-2010
摘要: A flexible thin-film transistor (TFT) was made by integrating a high-kappa HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm(2)/V . s, and an acceptable ON/OFF current ratio of 2 x 10(5). The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency.
URI: http://dx.doi.org/10.1109/LED.2010.2047232
http://hdl.handle.net/11536/5199
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2047232
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 7
起始頁: 680
結束頁: 682
顯示於類別:期刊論文