Title: Metal nanocrystals as charge storage nodes for nonvolatile memory devices
Authors: Yeh, P. H.
Chen, L. J.
Liu, P. T.
Wang, D. Y.
Chang, T. C.
光電工程學系
Department of Photonics
Keywords: Ni nanocrystals;NiSi2 nanocrystals;CoSi2 nanocrystals;metal nanocrystals;nonvolatile memory
Issue Date: 10-Feb-2007
Abstract: The memory effects of the metal nanocrystals were found to be more pronounced than those of the semiconductor nanocrystals. Various metal nanocrystals as charge storage nodes are reviewed. The memory effects have strong relationship with the work function, and the work function can be modulated by changing the metal species. By tunneling dielectrics engineering, the optimum I-GWrite/Erase/I-G Retention ratio can be obtained. (c) 2006 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.electacta.2006.09.006
http://hdl.handle.net/11536/5179
ISSN: 0013-4686
DOI: 10.1016/j.electacta.2006.09.006
Journal: ELECTROCHIMICA ACTA
Volume: 52
Issue: 8
Begin Page: 2920
End Page: 2926
Appears in Collections:Conferences Paper


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