標題: Metal nanocrystals as charge storage nodes for nonvolatile memory devices
作者: Yeh, P. H.
Chen, L. J.
Liu, P. T.
Wang, D. Y.
Chang, T. C.
光電工程學系
Department of Photonics
關鍵字: Ni nanocrystals;NiSi2 nanocrystals;CoSi2 nanocrystals;metal nanocrystals;nonvolatile memory
公開日期: 10-二月-2007
摘要: The memory effects of the metal nanocrystals were found to be more pronounced than those of the semiconductor nanocrystals. Various metal nanocrystals as charge storage nodes are reviewed. The memory effects have strong relationship with the work function, and the work function can be modulated by changing the metal species. By tunneling dielectrics engineering, the optimum I-GWrite/Erase/I-G Retention ratio can be obtained. (c) 2006 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.electacta.2006.09.006
http://hdl.handle.net/11536/5179
ISSN: 0013-4686
DOI: 10.1016/j.electacta.2006.09.006
期刊: ELECTROCHIMICA ACTA
Volume: 52
Issue: 8
起始頁: 2920
結束頁: 2926
顯示於類別:會議論文


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  1. 000244552300024.pdf