標題: In Situ Doped Source/Drain for Performance Enhancement of Double-Gated Poly-Si Nanowire Transistors
作者: Chen, Wei-Chen
Lin, Horng-Chih
Chang, Yu-Chia
Lin, Chuan-Ding
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Field-effect transistor;in situ doping;leakage;multiple gate;nanowire (NW);polycrystalline-Si (poly-Si)
公開日期: 1-七月-2010
摘要: A poly-Si nanowire (NW) thin-film transistor configured with the double-gated scheme was fabricated and characterized. The fabrication process features the clever use of selective plasma etching to form a rectangular NW underneath a hard mask. In this paper, we show that replacing the original ion-implanted poly-Si with in situ doped poly-Si for the source/drain significantly enhances the device performance, including steeper subthreshold swing (SS), larger on/off current ratio, and reduced series resistance. In particular, the SS is improved to a record-breaking low value of 73 mV/dec, which, to the best of our knowledge, is the most ideal ever reported for a poly-Si based device. The new NW transistors with such excellent switching properties are highly promising for reducing power consumption and operational voltage in practical circuit applications.
URI: http://dx.doi.org/10.1109/TED.2010.2049227
http://hdl.handle.net/11536/5172
ISSN: 0018-9383
DOI: 10.1109/TED.2010.2049227
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 57
Issue: 7
起始頁: 1608
結束頁: 1615
顯示於類別:期刊論文


文件中的檔案:

  1. 000278995900016.pdf