Title: Discussion on electrical characteristics of i-In(0.13)Ga(0.87)N p-i-n photovoltaics by using a single/multi-antireflection layer
Authors: Lee, Han Cheng
Su, Yan Kuin
Chuang, Wen Kuei
Lin, Jia Ching
Huang, Kuo Chin
Cheng, Yi Cheng
Chang, Kuo Jen
Department of Electrophysics
Issue Date: 1-Jul-2010
Abstract: Active layers of i-In(0.13)Ga(0.87)N p-i-n photovoltaics (PVs) with a single antireflection layer (SARL) and a multi-antireflection layer (MARL), respectively, were fabricated. Reflectance simulation results show that the PVs with a SARL or a MARL have performance superior to those without an antireflection layer (ARL). In particular, the surface reflectance of PVs with a MARL was reduced to 6% at wavelengths between 330 and 500 nm. The ARL reduced the reflectance and recombination current, as well as boosting shunt resistance without increasing series resistance. Compared with PVs without an ARL, the open-circuit voltage and fill factor of PVs with a MARL increased by 100% and 54.5%, respectively. The ideal factor was improved by 19.4% and 31.9% in devices with a SARL (SiO(2)) and a MARL (Ta(2)O(5)/SiO(2)), respectively. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.solmat.2010.03.020
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2010.03.020
Volume: 94
Issue: 7
Begin Page: 1259
End Page: 1262
Appears in Collections:Articles