標題: Highly-directional emission patterns based on near single guided mode extraction from GaN-based ultrathin microcavity light-emitting diodes with photonic crystals
作者: Lai, Chun-Feng
Kuo, Hao-Chung
Yu, Peichen
Lu, Tien-Chang
Chao, Chia-Hsin
Yen, Hsi-Hsuan
Yeh, Wen-Yung
光電工程學系
Department of Photonics
關鍵字: electroluminescence;gallium compounds;III-V semiconductors;light emitting diodes;photonic crystals;refractive index;wide band gap semiconductors
公開日期: 5-Jul-2010
摘要: This study investigates the distribution of highly-directional far-field emission on GaN-based ultrathin microcavity light-emitting diodes (uMCLEDs) with photonic crystals (PhCs). The ultrathin 550 nm cavity, PhC lattice constant of 370 nm, and hole depth of 250 nm in the GaN PhC uMCLED provide near single guided mode extraction and a pattern of high directionality radiation. Angular-spectral-resolved electroluminescence measurements reveal photon-band structure agreement with the fundamental mode effective refractive index dispersion curve. In addition, GaN PhC uMCLED increase the output power extraction efficiency by 145.9% (similar to 2.46x) compared with GaN non-PhC uMCLED, and a directional far-field emission pattern at half intensity of nearly +/- 15 degrees. (C) 2010 American Institute of Physics. [doi:10.1063/1.3459970]
URI: http://dx.doi.org/10.1063/1.3459970
http://hdl.handle.net/11536/5148
ISSN: 0003-6951
DOI: 10.1063/1.3459970
期刊: APPLIED PHYSICS LETTERS
Volume: 97
Issue: 1
結束頁: 
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