Title: The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitor
Authors: Trinh, H. D.
Chang, E. Y.
Wu, P. W.
Wong, Y. Y.
Chang, C. T.
Hsieh, Y. F.
Yu, C. C.
Nguyen, H. Q.
Lin, Y. C.
Lin, K. L.
Hudait, M. K.
Department of Materials Science and Engineering
Issue Date: 26-Jul-2010
Abstract: The inversion behaviors of atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitors are studied by various surface treatments and postdeposition annealing using different gases. By using the combination of wet sulfide and dry trimethyl aluminum surface treatment along with pure hydrogen annealing, a strong inversion capacitance-voltage (C-V) response is observed, indicating a remarkable reduction in interface trap state density (D(it)) at lower half-part of In(0.53)Ga(0.47)As band gap. This low D(it) was confirmed by the temperature independent C-V stretch-out and horizontal C-V curves. The x-ray photoelectron spectroscopy spectra further confirm the effectiveness of hydrogen annealing on the reduction of native oxides. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467813]
URI: http://dx.doi.org/10.1063/1.3467813
ISSN: 0003-6951
DOI: 10.1063/1.3467813
Volume: 97
Issue: 4
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Appears in Collections:Articles