標題: Oxygen vacancy estimation of high k metal gate using thermal dynamic model
作者: Chang, H. L.
Liang, M. S.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: free energy;hafnium compounds;MOS capacitors;silicon;silicon compounds;titanium compounds;vacancies (crystal)
公開日期: 26-七月-2010
摘要: Oxygen vacancies are electronic defects in materials. In a metal oxide system, the distribution of such vacancies is determined by the oxygen affinity. This study predicts the oxygen vacancy concentration in a high-k/metal gate system using a developed thermal dynamic model. A system with Ti:N=2 has a 200 mV lower flat band voltage than an N rich metal. The Gibbs free energy of formation of oxygen vacancies, similar to 0.5 eV, is derived from flab band voltage shifts and created neutral oxygen vacancy. The oxygen vacancy model based on estimating thermal dynamics is proposed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473772]
URI: http://dx.doi.org/10.1063/1.3473772
http://hdl.handle.net/11536/5128
ISSN: 0003-6951
DOI: 10.1063/1.3473772
期刊: APPLIED PHYSICS LETTERS
Volume: 97
Issue: 4
結束頁: 
顯示於類別:期刊論文


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