|標題:||Oxygen vacancy estimation of high k metal gate using thermal dynamic model|
|作者:||Chang, H. L.|
Liang, M. S.
Department of Materials Science and Engineering
|關鍵字:||free energy;hafnium compounds;MOS capacitors;silicon;silicon compounds;titanium compounds;vacancies (crystal)|
|摘要:||Oxygen vacancies are electronic defects in materials. In a metal oxide system, the distribution of such vacancies is determined by the oxygen affinity. This study predicts the oxygen vacancy concentration in a high-k/metal gate system using a developed thermal dynamic model. A system with Ti:N=2 has a 200 mV lower flat band voltage than an N rich metal. The Gibbs free energy of formation of oxygen vacancies, similar to 0.5 eV, is derived from flab band voltage shifts and created neutral oxygen vacancy. The oxygen vacancy model based on estimating thermal dynamics is proposed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473772]|
|期刊:||APPLIED PHYSICS LETTERS|