Title: High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devices
Authors: Lin, Meng-Han
Wu, Ming-Chi
Huang, Chun-Yang
Lin, Chen-Hsi
Tseng, Tseung-Yuen
Department of Electronics Engineering and Institute of Electronics
Issue Date: 28-Jul-2010
Abstract: The fabrication of SrZrO(3) (SZO) memory devices with oxygen-rich (OR) and oxygen-deficient (OD) double layers, their resistive switching (RS) characteristics and mechanisms are investigated in this study. Due to the difference in oxygen content between the OR and OD layers formed by an oxygen flow control (OFC) process during SZO deposition, the RS region is effectively reduced and localized within the OR layer, which leads to a low operation voltage and stable RS behaviours. Furthermore, the OFC SZO device exhibits high-speed switching (10 ns) over 400 times and long retention (>10(6) s), showing promising potential for next-generation nonvolatile memory applications.
URI: http://dx.doi.org/10.1088/0022-3727/43/29/295404
ISSN: 0022-3727
DOI: 10.1088/0022-3727/43/29/295404
Volume: 43
Issue: 29
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Appears in Collections:Articles