Title: A Raman study of ZnSe at high pressure
Authors: Chou, WC
Lin, CM
Ro, RS
Ho, CS
Hong, DY
Yang, CS
Chuu, DS
Yang, TJ
Xu, J
Huang, E
Department of Electrophysics
Issue Date: 1-Jun-1997
Abstract: The ZnSe was studied by Raman scattering spectroscopy at pressures up to 36 GPa at first time. The present researchers have found splittings of transverse optical (TO) phonon at 4.65 and 7.61 GPa. In addition, the Raman signals of the longitudinal optical (LO) phonon disappeared at 14.35 GPa. The disappearance of the LO phonon is attributed to the semiconductor-metal phase transition. However, the TO phonon peaks were still visible above the metallization pressure.
URI: http://hdl.handle.net/11536/512
ISSN: 0577-9073
Volume: 35
Issue: 3
Begin Page: 266
End Page: 273
Appears in Collections:Articles