標題: Properties of highly resistive and nonstoichiometric GaAs film grown by low-temperature metalorganic chemical vapor deposition using tertiarybutylarsine
作者: Chen, WC
Chang, CS
Chen, WK
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
關鍵字: high resistivity film;LT-MOCVD;TBAs;nonstoichiometry;V/III ratios
公開日期: 1-六月-1997
摘要: The properties of highly resistive and nonstoichiometric GaAs films grown by metalorganic chemical vapor deposition (MOCVD) at low temperature (LT) are studied by transmission electron microscopy (TEM), photoluminescence (PL), deep level transient spectroscopy, and double crystal X-ray and X-ray photoelectron spectroscopy. GaAs films are gown with source precursors of triethylgallium (TEGa) and tertiarybutylarsine (TBAs) at substrate temperatures of 425-550 degrees C. The microstructure observed in the MOCVD GaAs film shows better film quality as the input V/III molar flow ratios increase. Furthermore, the growth rate and the shift of binding energy for the As 3d core level of the him are slightly increased with increasing V/III ratio, but the intensity of V-As-related emission in PL is decreased. We suggest that the high resistivity of the LT-MOCVD film is due to structural defects caused by the nonstoichiometry of excess As atoms in the film.
URI: http://dx.doi.org/10.1143/JJAP.36.3649
http://hdl.handle.net/11536/510
ISSN: 0021-4922
DOI: 10.1143/JJAP.36.3649
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 36
Issue: 6A
起始頁: 3649
結束頁: 3654
顯示於類別:期刊論文


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  1. 000073628100053.pdf