標題: Reduction of leakage current in chemical-vapor-deposited Ta2O5 thin films by furnace N2O annealing
作者: Sun, SC
Chen, TF
電子工程學系及電子研究所
奈米中心
Department of Electronics Engineering and Institute of Electronics
Nano Facility Center
公開日期: 1-六月-1997
摘要: In this brief, we present a post-deposition annealing technique that employs furnace annealing in N2O (FN2O) to reduce the leakage current of chemical-vapor-deposited tantalum penta-oxide (CVD Ta2O5) thin films, Compared with furnace annealing in O-2 (FO) and rapid thermal annealing in N2O (RTN2O), FN2O annealing proved to have the lowest leakage current and the most reliable time-dependent dielectric breakdown (TDDB).
URI: http://dx.doi.org/10.1109/16.585562
http://hdl.handle.net/11536/500
ISSN: 0018-9383
DOI: 10.1109/16.585562
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 44
Issue: 6
起始頁: 1027
結束頁: 1029
顯示於類別:期刊論文


文件中的檔案:

  1. A1997WY93700017.pdf