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Issue DateTitleAuthor(s)
2010Low Temperature Annealing with Solid-State Laser or UV Lamp Irradiation on Amorphous IGZO Thin-Film TransistorsZan, Hsiao-Wen; Chen, Wei-Tsung; Chou, Cheng-Wei; Tsai, Chuang-Chuang; Huang, Ching-Neng; Hsueh, Hsiu-Wen; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
3-Aug-2009Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxyChao, C. L.; Chiu, C. H.; Lee, Y. J.; Kuo, H. C.; Liu, Po-Chun; Tsay, Jeng Dar; Cheng, S. J.; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
28-Jun-2010Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin filmsChen, Min-Chen; Chang, Ting-Chang; Tsai, Chih-Tsung; Huang, Sheng-Yao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Effects of Laser Sources on Damage Mechanisms and Reverse-Bias Leakages of Laser Lift-Off GaN-Based LEDsCheng, Ji-Hao; Wu, YewChung Sermon; Peng, Wei Chih; Ouyang, Hao; 材料科學與工程學系; Department of Materials Science and Engineering
2-Mar-2009Physical properties of amorphous InGaZnO4 films doped with MnLiu, Shiu-Jen; Fang, Hau-Wei; Su, Shih-Hao; Li, Chia-Hung; Cherng, Jyh-Shiarn; Hsieh, Jang-Hsing; Juang, Jenh-Yih; 電子物理學系; Department of Electrophysics